Accession Number : ADA532761


Title :   Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation


Descriptive Note : Final rept. 1 Aug 2006-31 Jul 2009


Corporate Author : PITTSBURGH UNIV PA


Personal Author(s) : Wang, Qing-Ming


Full Text : http://www.dtic.mil/get-tr-doc/pdf?AD=ADA532761


Report Date : 2010


Pagination or Media Count : 91


Abstract : Thin film bulk acoustic wave resonators (FBAR) using piezoelectric AlN, ZnO and GaN thin films have attracted extensive research activities in the past years. Highly c-axis oriented (normal-plane orientation) binary semiconductor piezoelectric thin films are particularly investigated for resonators operating at the fundamental thickness longitudinal mode. Depending on the processing conditions, tilted polarization (c-axis off the normal direction to the substrate surface) is often found in the as-deposited piezoelectric thin films, which leads to the coexistence of thickness longitudinal mode and shear mode for the thin film resonators.


Descriptors :   *ACOUSTIC RESONATORS , *DUAL MODE , *THIN FILMS , *ACOUSTIC WAVES , BULK MATERIALS , ALUMINUM NITRIDES , ZINC OXIDES , ORIENTATION(DIRECTION) , GALLIUM NITRIDES , PIEZOELECTRIC MATERIALS , SHEAR PROPERTIES


Subject Categories : ACOUSTICS


Distribution Statement : APPROVED FOR PUBLIC RELEASE