Accession Number : ADA522052


Title :   AFOSR Wafer Bonding


Descriptive Note : Final performance rept.


Corporate Author : CALIFORNIA UNIV SANTA BARBARA


Personal Author(s) : Mishra, Umesh


Full Text : http://www.dtic.mil/get-tr-doc/pdf?AD=ADA522052


Report Date : 31 JUL 2009


Pagination or Media Count : 9


Abstract : The concept of a Bonded Field-Effect Transistor has been successfully demonstrated, using an InGaAs/InAlAs MESFET Source/Gate region with an InGaN/GaN drain region. Bonding other material combinations such as Si-GaP and Si-GaN have been attempted and explored. Material non-uniformity severely impacts the ability of GaN to bond, and several process developments have been made to attempt to overcome this issue. Many possibilities exist for the continued exploration of this new class of devices, promising both high-frequency and high-voltage operation.


Descriptors :   *FIELD EFFECT TRANSISTORS , *BONDING , GALLIUM NITRIDES , INDIUM ARSENIDES


Subject Categories : ELECTRICAL AND ELECTRONIC EQUIPMENT
      SOLID STATE PHYSICS


Distribution Statement : APPROVED FOR PUBLIC RELEASE