Accession Number : ADA522052
Title : AFOSR Wafer Bonding
Descriptive Note : Final performance rept.
Corporate Author : CALIFORNIA UNIV SANTA BARBARA
Personal Author(s) : Mishra, Umesh
Report Date : 31 Jul 2009
Pagination or Media Count : 9
Abstract : The concept of a Bonded Field-Effect Transistor has been successfully demonstrated, using an InGaAs/InAlAs MESFET Source/Gate region with an InGaN/GaN drain region. Bonding other material combinations such as Si-GaP and Si-GaN have been attempted and explored. Material non-uniformity severely impacts the ability of GaN to bond, and several process developments have been made to attempt to overcome this issue. Many possibilities exist for the continued exploration of this new class of devices, promising both high-frequency and high-voltage operation.
Descriptors : *FIELD EFFECT TRANSISTORS , *BONDING , GALLIUM NITRIDES , INDIUM ARSENIDES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE