Accession Number : ADA512284


Title :   Atomic Layer Deposition Enabled Interconnect Technology for Vertical Nanowire Arrays


Descriptive Note : Journal article


Corporate Author : COLORADO UNIV AT BOULDER DEPT OF MECHANICAL ENGINEERING


Personal Author(s) : Cheng, Jen-Hau ; Seghete, Dragos ; Lee, Myongjai ; Schlager, John B ; Bertness, Kris A ; Sanford, Norman A ; Yang, Ronggui ; George, Steven M ; Lee, Y C


Full Text : http://www.dtic.mil/dtic/tr/fulltext/u2/a512284.pdf


Report Date : Jun 2009


Pagination or Media Count : 26


Abstract : We have demonstrated an atomic layer deposition (ALD) enabled interconnect technology for vertical, c-axis oriented gallium nitride (GaN) nanowire (NW, 5-10 um in length, 80-200 nm in diameter) arrays encapsulated by Benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal co-axial dielectric (ALDalumina)/ conductor (ALD-tungsten) coverage and precise thickness control for nanowire metallization. Furthermore, we have successfully developed a fabrication process to locally remove and connect tungsten (W) interconnect on NWs. Cross-sectional image taken in a focused ion beam (FIB) tool confirms the conformality of ALD interconnects. Photoluminescence (PL) wavelengths of the nanowires array can be tuned dynamically by changing the input current supplied to ALD-tungsten interconnect which heats nanowires. Such an experiment also demonstrated the quality of interconnect. This interconnect technology can be applied to various vertical nanowire-based devices, such as nanowire light emitting diodes (LEDs), nanowire-based field effect transistors (FETs), resonators, batteries or biomedical applications.


Descriptors :   *ATOMIC LAYER EPITAXY , *NANOWIRES , DIELECTRICS , FABRICATION , CURRENT DENSITY , FIELD EFFECT TRANSISTORS , ION BEAMS , DEPOSITION , CIRCUIT INTERCONNECTIONS , RESONATORS , BIOMEDICINE , LIGHT EMITTING DIODES , PHOTOLUMINESCENCE , REPRINTS , THICKNESS


Subject Categories : Electrical and Electronic Equipment
      Metallurgy and Metallography
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE