Accession Number : ADA507271


Title :   High Mobility 4H-SiC Trenched Gate MOSFETs


Corporate Author : ARMY RESEARCH DEVELOPMENT AND ENGINEERING COMMAND REDSTONE ARSENAL AL


Personal Author(s) : Wu, Jian ; Hu, J. ; Zhao, J. H. ; Wang, X. ; Li, X. ; Burke, T.


Full Text : http://www.dtic.mil/dtic/tr/fulltext/u2/a507271.pdf


Report Date : 09 AUG 2006


Pagination or Media Count : 11


Abstract : A new 4H-SiC trenched gate MOSFET structure with epitaxial buried channel improving the channel mobility is reported. Fabricated devices subject to rapid thermal annealing at 850 deg C for 5 min exhibit a peak field-effect mobility of 104 cm(2)/Vs at room temperature (25 deg C) and a high peak of 269 cm(2)/Vs at 200 deg C, which are among the highest levels reported to date.


Descriptors :   *MOSFET SEMICONDUCTORS , *SILICON CARBIDES , *FIELD EFFECT TRANSISTORS , GATES(CIRCUITS) , FABRICATION , EPITAXIAL GROWTH , METAL OXIDE SEMICONDUCTORS , ROOM TEMPERATURE , BURIED OBJECTS , CHANNELS , THERMAL RADIATION , MOBILITY , TRENCHING , PEAK VALUES , ANNEALING


Subject Categories : ELECTRICAL AND ELECTRONIC EQUIPMENT


Distribution Statement : APPROVED FOR PUBLIC RELEASE