Accession Number : ADA483352


Title :   Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study


Descriptive Note : Final technical rept. 1 Sep 2006-31 May 2007


Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING


Personal Author(s) : Sitar, Zlatko ; Collazo, Ramon


Full Text : http://www.dtic.mil/get-tr-doc/pdf?AD=ADA483352


Report Date : 27 JUN 2007


Pagination or Media Count : 16


Abstract : This report describes exploratory studies in the fabrication of the GaN LPH structures and their application in the fabrication of a depletion-mode metal semiconductor field effect transistors (MESFETs). Exploiting LPH growth technology, and the difference in the electronic properties of the different type of domains, i.e. as grown N-polar domains are conductive and Ga-polar domains are insulating, laterally selective doped areas can be realized for improving contact resistance to the conduction channel in GaN MESFETs. Basically, the N-polar domains act as the ohmic contacts to the channel that is localized in a Ga-polar domain.


Descriptors :   *FIELD EFFECT TRANSISTORS , *POLARITY , *DOPING , *GALLIUM NITRIDES , ELECTRIC CONTACTS , SEMICONDUCTOR DEVICES , FABRICATION , CONDUCTIVITY


Subject Categories : INORGANIC CHEMISTRY
      ELECTRICAL AND ELECTRONIC EQUIPMENT
      ELECTRICITY AND MAGNETISM


Distribution Statement : APPROVED FOR PUBLIC RELEASE