Accession Number : ADA281383
Title : Quantum Transport in Semiconductor Devices
Descriptive Note : Final rept.
Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH
Personal Author(s) : Ferry, David K.
Full Text : http://www.dtic.mil/get-tr-doc/pdf?AD=ADA281383
Report Date : 30 JUN 1994
Pagination or Media Count : 19
Abstract : This program concentrated on research investigating quantum effects in which these important in ultra-small semiconductor devices, and the manner in which these effects may limit downscaling of individual feature sizes. The major concentrations of the program were on: Tunneling-in gated semiconductor structures, an effect which has been found to be important in normal high- electron mobility transistors (HEMTs) with gate lengths of <0.025 micrometer. The role played by slab and interface phonon modes in transport within small semiconductor devices. Modeling of quantum effects in MESFET devices as a general tool for approaching the inclusion of such effects in dynamic semiconductor device models. Semiconductor devices, Hydrodynamic equations, Velocity overshoot, MESFETS, Device modeling.
Descriptors : *SEMICONDUCTOR DEVICES , *TRANSISTORS , *ELECTRON MOBILITY , VELOCITY , METALS , MOBILITY , MODELS , TOOLS , INCLUSIONS , PHONONS , HYDRODYNAMICS , SOLID STATE ELECTRONICS , TUNNELING , TRANSPORT , FIELD EFFECT TRANSISTORS , INTERFACES , QUANTUM THEORY , STRUCTURES , GATES(CIRCUITS)
Subject Categories : ELECTRICAL AND ELECTRONIC EQUIPMENT
ELECTRICITY AND MAGNETISM
QUANTUM THEORY AND RELATIVITY
Distribution Statement : APPROVED FOR PUBLIC RELEASE