Accession Number : ADA281383
Title : Quantum Transport in Semiconductor Devices
Descriptive Note : Final rept.
Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH
Personal Author(s) : Ferry, David K
Report Date : 30 Jun 1994
Pagination or Media Count : 19
Abstract : This program concentrated on research investigating quantum effects in which these important in ultra-small semiconductor devices, and the manner in which these effects may limit downscaling of individual feature sizes. The major concentrations of the program were on: Tunneling-in gated semiconductor structures, an effect which has been found to be important in normal high- electron mobility transistors (HEMTs) with gate lengths of 0.025 micrometer. The role played by slab and interface phonon modes in transport within small semiconductor devices. Modeling of quantum effects in MESFET devices as a general tool for approaching the inclusion of such effects in dynamic semiconductor device models. Semiconductor devices, Hydrodynamic equations, Velocity overshoot, MESFETS, Device modeling.
Descriptors : *SEMICONDUCTOR DEVICES , *TRANSISTORS , *ELECTRON MOBILITY , VELOCITY , METALS , MOBILITY , MODELS , TOOLS , INCLUSIONS , PHONONS , HYDRODYNAMICS , SOLID STATE ELECTRONICS , TUNNELING , TRANSPORT , FIELD EFFECT TRANSISTORS , INTERFACES , QUANTUM THEORY , STRUCTURES , GATES(CIRCUITS)
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE