Accession Number : ADA281383


Title :   Quantum Transport in Semiconductor Devices


Descriptive Note : Final rept.


Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH


Personal Author(s) : Ferry, David K


Full Text : http://www.dtic.mil/dtic/tr/fulltext/u2/a281383.pdf


Report Date : 30 Jun 1994


Pagination or Media Count : 19


Abstract : This program concentrated on research investigating quantum effects in which these important in ultra-small semiconductor devices, and the manner in which these effects may limit downscaling of individual feature sizes. The major concentrations of the program were on: Tunneling-in gated semiconductor structures, an effect which has been found to be important in normal high- electron mobility transistors (HEMTs) with gate lengths of 0.025 micrometer. The role played by slab and interface phonon modes in transport within small semiconductor devices. Modeling of quantum effects in MESFET devices as a general tool for approaching the inclusion of such effects in dynamic semiconductor device models. Semiconductor devices, Hydrodynamic equations, Velocity overshoot, MESFETS, Device modeling.


Descriptors :   *SEMICONDUCTOR DEVICES , *TRANSISTORS , *ELECTRON MOBILITY , VELOCITY , METALS , MOBILITY , MODELS , TOOLS , INCLUSIONS , PHONONS , HYDRODYNAMICS , SOLID STATE ELECTRONICS , TUNNELING , TRANSPORT , FIELD EFFECT TRANSISTORS , INTERFACES , QUANTUM THEORY , STRUCTURES , GATES(CIRCUITS)


Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Quantum Theory and Relativity


Distribution Statement : APPROVED FOR PUBLIC RELEASE