Accession Number : ADA236207
Title : Laser Induced Chemical Vapor Phase Epitaxial Growth of III-V semiconductor Films
Corporate Author : UNIVERSITY OF SOUTH FLORIDA TAMPA DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Chu, Shirley S. ; Chu, Ting L.
Report Date : 14 MAY 1991
Pagination or Media Count : 56
Abstract : The objective of this project is to investigate the homo- and hetero- epitaxial growth of device quality III-V semiconductor films by the free electron laser (FEL) induced growth at lower temperatures. An ArF excimer laser was used in this investigation. Metalorganic vapor phase epitaxy (MOVPE) is the commonly used technique in the growth of III-V compounds and alloys. The major concern to the use of MOVPE is the hazard involved in using highly toxic arsine and phosphine gases as the group V source materials. Efforts during this period have been focused to the homoepitaxial growth of GaAs and heteroepitaxial growth of InP on GaAs using alternate sources to eliminate the use of arsine and phosphine. Good quality epitaxial GaAs films have been prepared from elemental arsenic for the first time by either conventional substrate heating or laser enhanced processes. The epitaxial GaAs films grown from elemental arsenic are suitable for many GaAs based devices, particularly for large area devices such as solar cells. Significant cost reduction and less stringent safety requirements are major advantages.
Descriptors : *REQUIREMENTS , LOW TEMPERATURE , HAZARDS , TOXICITY , GROWTH(GENERAL) , GALLIUM ARSENIDES , FILMS , ORGANOMETALLIC COMPOUNDS , EPITAXIAL GROWTH , SUBSTRATES , ALLOYS , LASERS , VAPOR PHASES , GASES , REDUCTION , COSTS , FREE ELECTRON LASERS , QUALITY , SOLAR CELLS , HEATING , SAFETY , HETEROGENEITY , GROUP III COMPOUNDS , GROUP IV COMPOUNDS , GROUP V COMPOUNDS , SEMICONDUCTING FILMS , ARSINES , PHOSPHINE , EXCIMERS , SOURCES
Subject Categories : CRYSTALLOGRAPHY
SOLID STATE PHYSICS
Distribution Statement : APPROVED FOR PUBLIC RELEASE