Accession Number : ADA157691


Title :   Hot Electron Emission in Semiconductors.


Descriptive Note : Interim rept. no. 2, Jan-Jun 85,


Corporate Author : INNSBRUCK UNIV (AUSTRIA) INST OF EXPERIMENTAL PHYSICS


Personal Author(s) : Gornik,E ; Hoepfel,R A ; Helm,M


Full Text : http://www.dtic.mil/dtic/tr/fulltext/u2/a157691.pdf


Report Date : 05 Jul 1985


Pagination or Media Count : 8


Abstract : The hot electron temperature of 2D-electron in GaAs/GaAlAs heterostructures depends linearly on the input power as obtained from FIR emission experiments. From saturation absorption measurements we have obtained for the first time energy relaxation times for 2D electrons in GaAs in high magnetic fields. The streaming of hot carriers in crossed electric and magnetic fields has been observed in p-Ge and n-GaAs. This is a potential concept to obtain a FIR laser. Keywords include: Novel tunable FIR sources; Hot electron emission in GaAs/GaAlAs heterostructures; and Streaming of hot carriers in crossed electric and magnetic fields.


Descriptors :   *CHARGE CARRIERS , *ELECTRONS , INPUT , SOURCES , MEASUREMENT , MAGNETIC FIELDS , ELECTRIC FIELDS , LASERS , SATURATION , HIGH ENERGY , FAR INFRARED RADIATION , ELECTRON EMISSION , TUNING , POWER , ABSORPTION , STREAMS


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE