Accession Number : ADA124428
Title : Swept Line Electron Beam Annealing of Ion Implanted Semiconductors.
Descriptive Note : Technical rept.,
Corporate Author : ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
Personal Author(s) : Soda,Kenneth James
Report Date : Jul 1982
Pagination or Media Count : 132
Abstract : The capabilities of a Swept Line Electron Beam (SLEB) in annealing ion-implanted semiconductors are examined. This technique employs a fixed geometry, line-shaped electron beam through which implanted samples are mechanically scanned. In general, this technique can produce annealing results comparable or superior to those achievable by conventional furnace annealing. Residual point defects in self-implanted amorphous silicon treated by SLEB and furnace processes are examined by Deep Level Transient Spectroscopy.
Descriptors : *ANNEALING , *ION IMPLANTATION , *ELECTRON BEAMS , *SILICON , PHASE TRANSFORMATIONS , GALLIUM ARSENIDES , PHOTOLUMINESCENCE , AMORPHOUS MATERIALS , CRYSTALS , SEMICONDUCTORS , ELECTRICAL PROPERTIES , IMPURITIES , NITROGEN , CRYSTAL DEFECTS , FLUORIDES , GALLIUM PHOSPHIDES , BORON COMPOUNDS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE