Accession Number : ADA107395
Title : Preparation of Large-Diameter GaAs Crystals.
Descriptive Note : Annual rept. no. 1, Jun 80-Jun 81,
Corporate Author : WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
Personal Author(s) : Hobgood,H M ; Braggins,T T ; Barrett,D L ; Eldridge,G W ; Thomas,R N
Report Date : 18 Sep 1981
Pagination or Media Count : 125
Abstract : Significant progress has been made toward developing large-diameter, semi-insulating GaAs crystals of improved quality by LEC growth for direct ion implantation. The intent has been to (1) develop a reproducible twin-free growth technique for large-diameter 50-mm and 75-mm GaAs crystals; (2) achieve stable, semi-insulating substrate properties without resorting to intentional doping with chromium (or at least to reduce the Cr content significantly) to avoid the serious redistribution problems associated with this impurity; (3) obtain uniform, predictable doping characteristics by direct 29Si implantation; and (4) demonstrate that uniform, round cross-section slices suitable for low-cost IC processing can be fabricated from LEC crystals.
Descriptors : *GALLIUM ARSENIDES , *SYNTHESIS(CHEMISTRY) , *CRYSTALS , IONS , PREDICTIONS , INSULATION , SUBSTRATES , IMPURITIES , ION IMPLANTATION , DOPING , CHROMIUM , REPRODUCIBILITY , CRYSTAL GROWTH
Subject Categories : Physical Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE