Accession Number : AD1035362


Title :   Assessment of Ga2O3 technology


Descriptive Note : Technical Report


Corporate Author : AFRL/RYDD WPAFB United States


Personal Author(s) : Bayraktaroglu,Burhan


Full Text : http://www.dtic.mil/dtic/tr/fulltext/u2/1035362.pdf


Report Date : 15 Sep 2016


Pagination or Media Count : 95


Abstract : Ga2O3 is a member of the ultra-wide bandgap semiconductor family. Because of its wide bandgap, it finds applications in UV-transparent conductive films, UV detectors, and high power electronics and possibly in microwave switching and amplification. Power electronics applications range from on-chip power converters to high voltage rectifiers for electric power transmission lines. High-voltage switching transistors used in these applications are required to have small ON resistance while providing very high blocking voltages in the OFF state. There are already kV-range power switches today. The target for the Ga2O3 devices will be in the 100s of kV to MV range.


Descriptors :   power electronics , metalsemiconductor junctions , energy bands , schottky diodes , wide bandgap semiconductors , chemical vapor deposition , aluminum oxides , band gaps , epitaxial growth , crystal structure , charge carriers , modules (electronics) , high voltage , GALLIUM COMPOUNDS


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE