Accession Number : AD1033048


Title :   Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics


Descriptive Note : Technical Report,26 Sep 2011,25 Sep 2015


Corporate Author : PENNSYLVANIA STATE UNIV STATE COLLEGE UNIVERSITY PARK United States


Personal Author(s) : Jackson,Thomas


Full Text : http://www.dtic.mil/dtic/tr/fulltext/u2/1033048.pdf


Report Date : 14 Apr 2017


Pagination or Media Count : 66


Abstract : Radiation exposure effects for ZnO thin film transistors (TFTs) with active layers deposited by plasma enhanced atomic layer deposition and pulsed laser deposition are studied for gamma ray doses up to 100 Mrad. Radiation exposure related TFT changes, either with or without electrical bias during irradiation, are primarily a negative threshold voltage shift and a smaller threshold voltage shift. Field effect mobility remains nearly unchanged. Radiation induced changes are nearly completely removed by annealing at 200 C for 1 minute and some recovery is seen even at room temperature. To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.


Descriptors :   radiation effects , thin film transistors , gamma rays , ANNEALING , radiation hardening , semiconductors , ionizing radiation , conduction bands


Subject Categories : Electrical and Electronic Equipment
      Electromagnetic Shielding


Distribution Statement : APPROVED FOR PUBLIC RELEASE